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Electronic structure of Al chemisorbed on GaAs(110)

 

作者: Eugene J. Mele,   J. D. Joannopoulos,  

 

期刊: Journal of Vacuum Science and Technology  （AIP Available online 1979）
卷期: Volume 16, issue 5  

页码: 1154-1158

 

ISSN:0022-5355

 

年代: 1979

 

DOI:10.1116/1.570180

 

出版商: American Vacuum Society

 

关键词: ALUMINIUM;CHEMISORPTION;GALLIUM ARSENIDES;ELECTRONIC STRUCTURE;INTERFACES;FERMI LEVEL;BAND THEORY;SCHOTTKY BARRIER DIODES;PHOTOEMISSION;HAMILTONIANS;MATRIX ELEMENTS

 

数据来源: AIP

 

摘要:

We report results of tight binding calculation for ordered half monolayer coverages of Al on GaAs(110) in a variety of chemisorption configurations. We find that differences between the chemisorption geometries and relaxations of these configurations lead to a variety of electrical characteristics of the surfaces. The relation of this result to the barrier formed at higher coverages is discussed.

 

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