Activation energy for diamond growth from the carbon–hydrogen gas system at low substrate temperatures
作者:
J. Stiegler,
T. Lang,
Y. von Kaenel,
J. Michler,
E. Blank,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 70,
issue 2
页码: 173-175
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.118348
出版商: AIP
数据来源: AIP
摘要:
The growth kinetics of diamond films deposited at low substrate temperatures (600–400 °C) from the carbon–hydrogen gas system have been studied. When the substrate temperature alone was varied, independently of all other process parameters in the microwave plasma reactor, an activation energy in the order of 7 kcal/mol was observed. This value did not change with different carbon concentrations in hydrogen. It is supposed that growth kinetics in this temperature range are controlled by a single chemical reaction, probably the abstraction of surface bonded hydrogen by gas phase atomic hydrogen. ©1997 American Institute of Physics.
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