AbstractThe reaction of silane with H atomswas studied behind reflected shock waves at temperatures between 998 K and 1273 K and pressures around 1.5 bar. The thermal decomposition of a few ppm ethyl iodide (C2H5I) was used as a well known H‐atom source. The atomic resonance absorption spectroscopy (ARAS) was applied for time resolved and simultaneous measurements of H‐ and Si‐atom concentrations. The presence of an excess of SiH4causes a fast consumption of H atoms according to reaction (R 5). The signals obtained were kinetically evaluated by computer simulations based on a simplified reaction mechanism. The rate coefficient for reaction (R 5) was found to be:\documentclass{article}\pagestyle{empty}\begin{document}$$ k_5 = 7.8 \times 10^{14} \;\exp ( - 2260/T)\;{\rm{cm}}^3 \;{\rm{mol}}^{- 1} \;{\rm{s}}^{- 1}. $$\end{doc