Prevention of oxide formation during liquid phase epitaxy of silicon
作者:
K. J. Weber,
A. W. Blakers,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 66,
issue 10
页码: 1243-1245
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.113250
出版商: AIP
数据来源: AIP
摘要:
Successful growth of silicon in a liquid phase epitaxial (LPE) system requires preventing the formation of a native oxide more than a few monolayers thick. It has been found that the desorption of oxygen and water vapor from the ends of the furnace tube can lead to oxidation of silicon wafers located in the tube center, thus inhibiting epitaxy. A simple method to avoid this problem and eliminate the need for long flush times is described. Evidence is presented that indium, a common solvent in LPE of silicon, plays a catalytic role in the oxidation of silicon. ©1995 American Institute of Physics.
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