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Dislocation Etch Pits on the Basal Plane of Zinc Crystals

 

作者: H. S. Rosenbaum,   M. M. Saffren,  

 

期刊: Journal of Applied Physics  (AIP Available online 1961)
卷期: Volume 32, issue 10  

页码: 1866-1872

 

ISSN:0021-8979

 

年代: 1961

 

DOI:10.1063/1.1728254

 

出版商: AIP

 

数据来源: AIP

 

摘要:

An etch pit technique has been developed that reveals the sites of dislocations which intersect the basal plane surface of zinc crystals. Pits can be formed by either Cl2, HCl, Br2, HBr, or HI dissolved in an appropriate organic solvent. Etchants made with Cl2or HCl produce hexagonal pyramidal pits whose edges are parallel to ⟨101¯0⟩ directions; but Br2, BHr, or HI etchants produce hexagonal pits whose edges are parallel to ⟨112¯0⟩ directions. The technique is useful for observing glide which occurs on nonbasal planes. The dislocation etch pits are seen to form a ``polygonization'' pattern in a crystal that was annealed after deformation. A discussion is presented on the mechanism of etch pit formation and the factors which might determine the shape of the pits.

 

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