Dislocation Etch Pits on the Basal Plane of Zinc Crystals
作者:
H. S. Rosenbaum,
M. M. Saffren,
期刊:
Journal of Applied Physics
(AIP Available online 1961)
卷期:
Volume 32,
issue 10
页码: 1866-1872
ISSN:0021-8979
年代: 1961
DOI:10.1063/1.1728254
出版商: AIP
数据来源: AIP
摘要:
An etch pit technique has been developed that reveals the sites of dislocations which intersect the basal plane surface of zinc crystals. Pits can be formed by either Cl2, HCl, Br2, HBr, or HI dissolved in an appropriate organic solvent. Etchants made with Cl2or HCl produce hexagonal pyramidal pits whose edges are parallel to 〈101¯0〉 directions; but Br2, BHr, or HI etchants produce hexagonal pits whose edges are parallel to 〈112¯0〉 directions. The technique is useful for observing glide which occurs on nonbasal planes. The dislocation etch pits are seen to form a ``polygonization'' pattern in a crystal that was annealed after deformation. A discussion is presented on the mechanism of etch pit formation and the factors which might determine the shape of the pits.
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