Microdischarge devices fabricated in silicon
作者:
J. W. Frame,
D. J. Wheeler,
T. A. DeTemple,
J. G. Eden,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 9
页码: 1165-1167
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.119614
出版商: AIP
数据来源: AIP
摘要:
Cylindrical microdischarge cavities 200–400 &mgr;m in diameter and 0.5–5 mm in depth have been fabricated in silicon and operated at room temperature with neon or nitrogen at specific power loadings beyond10 kW/cm3.The discharges are azimuthally uniform and stable operation atN2and Ne pressures exceeding 1 atm and∼600 Torr,respectively, has been realized for 400 &mgr;m diameter devices. Spectroscopic measurements on neon discharges demonstrate that the device behaves as a hollow cathode discharge for pressures>50 Torr.As evidenced by emission from Ne andNe+(2P,2F)states as well asN2(C→B)fluorescence (316–492 nm), these discharge devices are intense sources of ultraviolet and visible radiation and are suitable for fabrication as arrays. ©1997 American Institute of Physics.
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