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Epitaxial yttrium silicide on (111) silicon by vacuum annealing

 

作者: M. Gurvitch,   A. F. J. Levi,   R. T. Tung,   S. Nakahara,  

 

期刊: Applied Physics Letters  （AIP Available online 1987）
卷期: Volume 51, issue 5  

页码: 311-313

 

ISSN:0003-6951

 

年代: 1987

 

DOI:10.1063/1.98453

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Epitaxial YSi2−xfilms have been fabricated. The smooth 430‐A˚‐thick silicide films on Si (111) substrates were characterized by a Rutherford backscattering minimum channeling yield &khgr;min=8%, establishing YSi2−xas one of the best known epitaxial silicides. Results of electrical measurements are also presented.

 

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