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An STM Study of the 2×7 Dysprosium‐Silicide Nanowire Superstructure on Si(001)
作者: C. Preinesberger, S. K. Becker, M. Da¨hne,
期刊:
AIP Conference Proceedings
（AIP Available online 1903）
页码: 837-844
ISSN:0094-243X
年代: 1903
DOI:10.1063/1.1639791
出版商: AIP
数据来源: AIP
摘要: We present a detailed STM study on the atomic structure and electronic properties of dysprosium‐silicide nanowires, which can be formed on Si(001) by self assembly. Under ideal circumstances, these nanowires cover the whole silicon surface with a well‐ordered 2×7 superstructure. Using voltage dependent STM we are able to develop an atomic structure model. © 2003 American Institute of Physics
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