Defects in InP homoepitaxial layers
作者:
S. Mahajan,
K. J. Bachmann,
D. Brasen,
E. Buehler,
期刊:
Journal of Applied Physics
(AIP Available online 1978)
卷期:
Volume 49,
issue 1
页码: 245-248
ISSN:0021-8979
年代: 1978
DOI:10.1063/1.324338
出版商: AIP
数据来源: AIP
摘要:
Defect structures inn‐type (001) and (1¯1¯1¯) homoepitaxial layers, grown by liquid phase epitaxy (LPE) onp‐type InP substrates, have been evaluated by transmission electron microscopy. It is shown that, even under ideal conditions of lattice match, defect structures are observed in epilayers. The (001) layer exhibits slip structure consisting of screw dislocations. It is argued that this structure could not have evolved to accommodate either the lattice parameter difference or twist that may have been inadvertently introduced during LPE. On the other hand, the (1¯1¯1¯) layer shows isolated faults and fault clusters consisting predominantly of intrinsic faults.
点击下载:
PDF
(319KB)
返 回