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Strain effects on InSb phonons in bulk and superlattice layers

 

作者: M. Siakavellas,   Y. S. Raptis,   E. Anastassakis,   D. J. Lockwood,  

 

期刊: Journal of Applied Physics  (AIP Available online 1997)
卷期: Volume 82, issue 12  

页码: 6235-6239

 

ISSN:0021-8979

 

年代: 1997

 

DOI:10.1063/1.366509

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We have studied the effect of uniaxial stress on the long-wavelength optical phonons of InSb at room temperature using Raman spectroscopy. From the observed frequency shifts and degeneracy splittings we obtain values for the phonon deformation potentials. The results are used to analyze previously reported Raman measurements of phonons in strainedInSb/In1−xAlxSbsuperlattices. ©1997 American Institute of Physics.

 

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