Strain effects on InSb phonons in bulk and superlattice layers
作者:
M. Siakavellas,
Y. S. Raptis,
E. Anastassakis,
D. J. Lockwood,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 82,
issue 12
页码: 6235-6239
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.366509
出版商: AIP
数据来源: AIP
摘要:
We have studied the effect of uniaxial stress on the long-wavelength optical phonons of InSb at room temperature using Raman spectroscopy. From the observed frequency shifts and degeneracy splittings we obtain values for the phonon deformation potentials. The results are used to analyze previously reported Raman measurements of phonons in strainedInSb/In1−xAlxSbsuperlattices. ©1997 American Institute of Physics.
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