Anisotropic materials with layered structure, like MoS2and WSe2, play an important role in a number of technologies. Some of these applications (lubrication, photovoltaics) require polycrystalline films oriented with theircaxis perpendicular to the substrate surface (type‐II texture), which is the thermodynamically favorable texture. However, films with the substrate ∥c(type‐I texture) are usually obtained. We report that an ultrathin (<10 nm) metal‐chalcogenide interlayer eutectics, like Ni3Se2, SnSe<thin>2, or InSe disentangle the growth mode of the film from the underlying amorphous substrate, and hence, WSe2films with a perfect type‐II texture and crystallites at least a few mm2large are obtained at temperatures as low as 700 °C (van der Waals rheotaxy–vdWR). The mechanism for this growth mode is proposed. ©1995 American Institute of Physics.