A broad peak was observed in commercially available single‐crystal 6H‐SiC material. The samples were nitrogen doped,ntype with free carrier concentration (ND−NA) of 1.3×1018cm−3that was determined from capacitance‐voltage (C‐V) measurements. The defect concentration profile showed that the defect was spatially localized and had a maximum concentration of 2.5×1014cm−3at 570 A˚ from the semiconductor‐metal interface. The activation energy varied with applied voltage fromEc−0.40 eV atVR=−7 V toEc−0.54 eV atVR=−5 V. This can be explained qualitatively in terms of the Poole–Frenkel effect. The defect was removed by the growth and subsequent removal of an oxide layer. Therefore, we conclude that the defect was caused by residual damage from the polishing process.