Formation of &bgr;‐SiC at the interface between an epitaxial Si layer grown by rapid thermal chemical vapor deposition and a Si substrate
作者:
Ki‐Bum Kim,
Philippe Maillot,
Alan E. Morgan,
Ahmad Kermani,
Yen‐Hui Ku,
期刊:
Journal of Applied Physics
(AIP Available online 1990)
卷期:
Volume 67,
issue 4
页码: 2176-2179
ISSN:0021-8979
年代: 1990
DOI:10.1063/1.345559
出版商: AIP
数据来源: AIP
摘要:
The formation of &bgr;‐SiC during rapid thermal chemical vapor deposition of an epitaxial Si layer on a (100) Si substrate has been demonstrated using high‐resolution cross‐sectional transmission electron microscopy and secondary ion mass spectrometry (SIMS) depth profiling. Ellipsoidal &bgr;‐SiC precipitates (3×10 nm2average size) were found with a density of (6±1)×109cm−2along the epilayer/substrate interface. SIMS revealed about 0.2 monolayer of carbon concentrated at the interface. The precipitates were shown to form during the hydrogen prebake as a result of improper surface cleaning. The crystalline quality of the epitaxial layer, however, was unaffected by the presence of the &bgr;‐SiC.
点击下载:
PDF
(542KB)
返 回