首页   按字顺浏览 期刊浏览 卷期浏览 p‐njunction diodes in InP and In1−xGaxAsyP1−yfabricated by beryllium...
p‐njunction diodes in InP and In1−xGaxAsyP1−yfabricated by beryllium‐ion implantation

 

作者: C. A. Armiento,   J. P. Donnelly,   S. H. Groves,  

 

期刊: Applied Physics Letters  （AIP Available online 1979）
卷期: Volume 34, issue 3  

页码: 229-231

 

ISSN:0003-6951

 

年代: 1979

 

DOI:10.1063/1.90740

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Mesa and planar InPp‐njunction diodes have been fabricated by beryllium‐ion implantation. These devices exhibit abrupt reverse‐bias breakdowns and low leakage currents. Similar mesa diodes have been produced in In1−xGaxAsyP1−y(Eg≈1.0 eV). Diodes operated in the punch‐through mode exhibited uniform breakdown over the area of the device, without any apparent edge effects.

 

点击下载:  PDF (185KB)



返 回