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A model for the formation of stacking faults in silicon

 

作者: S. Mahajan,   G. A. Rozgonyi,   D. Brasen,  

 

期刊: Applied Physics Letters  （AIP Available online 1977）
卷期: Volume 30, issue 2  

页码: 73-75

 

ISSN:0003-6951

 

年代: 1977

 

DOI:10.1063/1.89292

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A model for the evolution of stacking faults in silicon during oxidation and during aging of silicon containing oxygen is proposed. Based on the proposed mechanism, the observed role of dislocations, point‐defect clusters constituting the swirl pattern, and abrasion‐induced strain in the generation of stacking faults can be accounted for in a unified manner.

 

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