Simultaneous measurement of six layers in a silicon on insulator film stack using spectrophotometry and beam profile reflectometry
作者:
J. M. Leng,
J. J. Sidorowich,
Y. D. Yoon,
J. Opsal,
B. H. Lee,
G. Cha,
J. Moon,
S. I. Lee,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 81,
issue 8
页码: 3570-3578
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.364994
出版商: AIP
数据来源: AIP
摘要:
We performed simultaneous measurements of all the layer thicknesses in six layer silicon on oxide film structures. Visible-near-infrared spectrophotometry was combined with beam profile reflectometry to produce enough information to discriminate between potential solutions; the spectrometer or beam profile reflectometer alone is insufficient to solve such a complicated film stack. Development of a robust measurement recipe required a new global optimization method working in parameter spaces of up to 12 parameters. The recipe obtained was applied to a 50 site mapping of the wafer. We found excellent agreement between our optical measurement results and scanning electron micrograph data for all thicknesses. ©1997 American Institute of Physics.
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