F.E.T. operation in the pinchoff mode
作者:
F.N.Trofimenkoff,
A.Nordquist,
期刊:
Proceedings of the Institution of Electrical Engineers
(IET Available online 1968)
卷期:
Volume 115,
issue 4
页码: 496-502
年代: 1968
DOI:10.1049/piee.1968.0091
出版商: IEE
数据来源: IET
摘要:
Shockleys's theory of the junction field-effect transistor with step-junction transitions is reviewed and improved. Estimates of the effect of channel-length modulation on the output conductance and drain-to-gate capacitance are obtained. Theoretical results for both the constant mobility and field-dependent mobility cases are presented and are compared with experimental measurements made on a commercial planar field-effect device.
点击下载:
PDF
(650KB)
返 回