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Effect of indium on the field effect studies of thin SnTe films

 

作者: A. L. Dawar,   A. O. Mohammed,   Partap Kumar,   O. P. Taneja,   P. C. Mathur,  

 

期刊: Journal of Applied Physics  （AIP Available online 1982）
卷期: Volume 53, issue 4  

页码: 3356-3358

 

ISSN:0021-8979

 

年代: 1982

 

DOI:10.1063/1.331004

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Field effect studies were made on In‐rich SnTe films using metal‐insulator‐semiconductor (silver‐mica In‐Sn e) structures. It has been observed that when a negative gate field (∼1.5×105V/cm) was applied to the films at 77 K, a permanent decrease in the value of the Hall coefficientRHtakes place, whereas no such effect has been noticed in metal‐insulator‐semiconductor structures on undoped SnTe films.

 

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