Amorphous silicon carbon (a‐SiC:H) films have been deposited by the glow discharge technique using SiH4and CH4gas mixtures. At high discharge powers and low deposition chamber pressures, evidence for graphitic‐type bonding in C‐deficienta‐SiC:H is found and correlations are made between the appearance of this bonding with significant changes in the electronic and structural properties. This graphitic‐type bonding can be minimized by significant H attachment to C via CHn(n=2, 3) bonding. This results ina‐SiC:H films with low gap state densities and sharp Urbach tails.