The temperature range within which epitaxial unintentionally doped InP can be deposited from In and P2beams by MBE on to (100) InP substrates has been determined to be 100–405 °C. Above 410 °C whisker growth from In droplets via a vapor‐liquid‐solid process occurs; below 95 °C polycrystalline layers result on account of the nondissociation of P2.