A breakdown‐initiated negative‐resistance device with MOST‐transistor structure
作者:
G. J. Yu,
C. Tsai,
S. Y. Yu,
期刊:
Journal of Applied Physics
(AIP Available online 1979)
卷期:
Volume 50,
issue 10
页码: 6421-6422
ISSN:0021-8979
年代: 1979
DOI:10.1063/1.325734
出版商: AIP
数据来源: AIP
摘要:
An external controllable dc negative‐differential‐resistance (NDR) device is presented. The device structure is composed of a conventional MOST and two parasitic transistors, which are internally coupled together. The mechanism of NDR is found to be initiated by both the breakdown phenomena at the drain junction and the negative‐feedback circuit from the drain to the gate electrode through an externally connected resistor. Both the experimental observations and qualitative physical interpretations are given.
点击下载:
PDF
(156KB)
返 回