Progress in the chemistry of organosilicon resists
作者:
Antoni S. Gozdz,
期刊:
Polymers for Advanced Technologies
(WILEY Available online 1994)
卷期:
Volume 5,
issue 1
页码: 70-78
ISSN:1042-7147
年代: 1994
DOI:10.1002/pat.1994.220050110
出版商: John Wiley&Sons, Ltd.
关键词: Resists;Organosilicon polymers;Two‐layer microlithography;Oxygen plasma etching;Surface functionalization
数据来源: WILEY
摘要:
AbstractRecent developments in the chemistry of organosilicon polymers for use as oxygen plasma‐resistant imaging materials in microlithography are reviewed. Various classes of resists, grouped according to molecular structure, are described with special emphasis on properties critical in microlithographic applications. In addition, several silylation schemes involving selective silylation of a non‐silicon‐containing resist material following patternwise exposure to actinic radiation are also desc
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