Photoluminescence from wurtzite GaN under hydrostatic pressure
作者:
Sangsig Kim,
Irving P. Herman,
J. A. Tuchman,
K. Doverspike,
L. B. Rowland,
D. K. Gaskill,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 67,
issue 3
页码: 380-382
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.114635
出版商: AIP
数据来源: AIP
摘要:
The photoluminescence spectrum of undoped epitaxial wurtzite GaN layers on sapphire was measured for applied hydrostatic pressures up to 73 kbar at 9 K and up to 62 kbar at 300 K. The pressure dependences of theI2exciton recombination line and the ‘‘yellow’’ band (2.2 eV band at ambient pressure) were examined at 9 and 300 K, and the series of donor‐acceptor‐pair emission lines was analyzed at 9 K. From theI2lines, it was found that the band gap increases with pressure by 4.4±0.1 meV/kbar at 9 K and 4.7±0.1 meV/kbar at 300 K. ©1995 American Institute of Physics.
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