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Pressure induced conduction and valence band shifts in InP and GaAs from measurements at semiconductor–electrolyte interfaces

 

作者: W. P. Zurawsky,   J. E. Littman,   H. G. Drickamer,  

 

期刊: Journal of Applied Physics  （AIP Available online 1983）
卷期: Volume 54, issue 6  

页码: 3216-3219

 

ISSN:0021-8979

 

年代: 1983

 

DOI:10.1063/1.332483

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The effect of pressure on the band gap and flatband potential ofn‐ andp‐type InP and GaAs was studied to 10 kbar at 300 K. For both InP and GaAs it was determined that the increase of the energy gap of the direct transition is to first order due to an increase in energy of the conduction band edge.

 

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