首页   按字顺浏览 期刊浏览 卷期浏览 Vapor‐grown cw room‐temperature GaAs/InyGa1−yP lasers
Vapor‐grown cw room‐temperature GaAs/InyGa1−yP lasers

 

作者: C. J. Nuese,   G. H. Olsen,   M. Ettenberg,  

 

期刊: Applied Physics Letters  （AIP Available online 1976）
卷期: Volume 29, issue 1  

页码: 54-56

 

ISSN:0003-6951

 

年代: 1976

 

DOI:10.1063/1.88871

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Vapor‐grown double‐heterojunction (DH) laser structures of GaAs/InyGa1−yP have been prepared with room‐temperature threshold current densities as low as 1140 A/cm2and differential quantum efficiencies as high as 47%. cw operation at room temperature has been obtained from such devices.

 

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