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Preparation and characterization of tungsten tips for scanning tunneling microscopy

 

作者: A. Cricenti,   E. Paparazzo,   M. A. Scarselli,   L. Moretto,   S. Selci,  

 

期刊: Review of Scientific Instruments  （AIP Available online 1994）
卷期: Volume 65, issue 5  

页码: 1558-1560

 

ISSN:0034-6748

 

年代: 1994

 

DOI:10.1063/1.1144891

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Tungsten tips obtained through electrochemical etching have been characterized by scanning electron microscopy, scanning Auger microscopy, and scanning tunneling microscopy. While such tips resulted to be very sharp, a thick oxide layer (∼10 nm) is present at the apex. High‐vacuum annealing at 1800 K removes most of such oxide.

 

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