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Indium‐doped zinc oxide thin films prepared by rf magnetron sputtering

 

作者: I. Shih,   C. X. Qiu,  

 

期刊: Journal of Applied Physics  （AIP Available online 1985）
卷期: Volume 58, issue 6  

页码: 2400-2401

 

ISSN:0021-8979

 

年代: 1985

 

DOI:10.1063/1.335962

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Indium‐doped zinc oxide films have been prepared by rf magnetron sputtering, using ZnO targets containing up to 10 wt. % In2O3. Room temperature resistivity of the deposited films was found to decrease by about four orders of magnitude as the In2O3content was increased from 0 to 10 wt. %.

 

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