Photoemission study of evaporated CuInS2thin films. I. Surface stoichiometry and phase segregation
作者:
R. Scheer,
H. J. Lewerenz,
期刊:
Journal of Vacuum Science&Technology A: Vacuum, Surfaces, and Films
(AIP Available online 1994)
卷期:
Volume 12,
issue 1
页码: 51-55
ISSN:0734-2101
年代: 1994
DOI:10.1116/1.578857
出版商: American Vacuum Society
关键词: COPPER SULFIDES;INDIUM SULFIDES;THIN FILMS;TERNARY COMPOUNDS;STOICHIOMETRY;SURFACE LAYERS;PHOTOELECTRON SPECTROSCOPY;X RADIATION;PHYSICAL VAPOR DEPOSITION;CuInS2
数据来源: AIP
摘要:
The surfaces of evaporated CuInS2films were investigated by photoelectron spectroscopy (XPS) with respect to stoichiometry dependent features. The surface composition of In‐rich CuInS2films drastically exceeds the respective bulk value determined by energy dispersive x‐ray fluorescence and displays the formation of an In‐rich surface layer with a cation ratio of In/(In+Cu)=0.75(2). Sputter profiles obtained by Auger electron spectroscopy confirm the effect of In enrichment and Cu depletion on the surface. The altered surface region is estimated to extend approximately 0.1μm into the film. Films with a Cu‐rich bulk composition also exhibited In‐rich surfaces, but in addition the segregation of a CuS phase is concluded from XPS investigations. The interrelation of these observations is discussed using simple model considerations.
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