Low resistivity semiconducting films of ZnSe have been deposited at temperatures as low as 120 °C using dc magnetron co‐sputtering of Zn and In (dopant) targets in a reactive atmosphere of H2Se/Ar. Yellowish transparent films of ZnSe on glass and conductive transparent oxide‐coated glass substrates were obtained having a room‐temperature resistivity as low as 20 &OHgr; cm. Atomic absorption analysis showed a Zn to Se ratio of 49.8:49.0 and In concentration of about 1% for the reactively sputter‐deposited ZnSe:In films on glass. Optical absorption/transmission measurements yielded an energy band gap of about 2.65 eV at room temperature. X‐ray diffraction results indicated highly oriented polycrystalline films on glass with thecaxis parallel to the plane of the film.