Resonant tunneling of holes in double‐barrier structures in the presence of an in‐plane magnetic field
作者:
Jian‐Xin Zhu,
Z. D. Wang,
Chang‐De Gong,
期刊:
Journal of Applied Physics
(AIP Available online 1996)
卷期:
Volume 80,
issue 4
页码: 2291-2295
ISSN:0021-8979
年代: 1996
DOI:10.1063/1.363058
出版商: AIP
数据来源: AIP
摘要:
Using the asymptotic transfer‐matrix method, we investigate the resonant tunneling of holes in double‐barrier semiconductor structures in the presence of an in‐plane magnetic field. The transmission coefficients including ll (light to light hole), hl (light to heavy hole), hh (heavy to heavy hole), and lh (heavy to light hole) are calculated as a function of energy. As in the case of nonzero parallel wave vectors, the mixing of hole tunneling can also occur due to the in‐plane magnetic field. Moreover, as has been observed by resonant magnetotunneling spectroscopy, we also find that the different resonances have quite different magnetic‐field dependences. ©1996 American Institute of Physics.
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