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Resonant tunneling of holes in double‐barrier structures in the presence of an in‐plane magnetic field

 

作者: Jian‐Xin Zhu,   Z. D. Wang,   Chang‐De Gong,  

 

期刊: Journal of Applied Physics  (AIP Available online 1996)
卷期: Volume 80, issue 4  

页码: 2291-2295

 

ISSN:0021-8979

 

年代: 1996

 

DOI:10.1063/1.363058

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Using the asymptotic transfer‐matrix method, we investigate the resonant tunneling of holes in double‐barrier semiconductor structures in the presence of an in‐plane magnetic field. The transmission coefficients including ll (light to light hole), hl (light to heavy hole), hh (heavy to heavy hole), and lh (heavy to light hole) are calculated as a function of energy. As in the case of nonzero parallel wave vectors, the mixing of hole tunneling can also occur due to the in‐plane magnetic field. Moreover, as has been observed by resonant magnetotunneling spectroscopy, we also find that the different resonances have quite different magnetic‐field dependences. ©1996 American Institute of Physics.

 

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