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Amorphous siliconp‐njunction

 

作者: W. E. Spear,   P. G. Le Comber,   S. Kinmond,   M. H. Brodsky,  

 

期刊: Applied Physics Letters  （AIP Available online 1976）
卷期: Volume 28, issue 2  

页码: 105-107

 

ISSN:0003-6951

 

年代: 1976

 

DOI:10.1063/1.88658

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The preparation of an all‐amorphous thin‐filmp‐njunction is described. Thea‐Si films were produced by the glow discharge decomposition of silane, mixed with trace amounts of donor or acceptor impurities. The current‐voltage characteristics of the junction were investigated in the range from 150 to 300 K.

 

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