(Ba,Sr)TiO3(BST) films were synthesized onBaRuO3(BRO) using radio-frequency magnetron sputter deposition. Conductive (∼1 m&OHgr; cm) BRO layers of (110) texture were produced at a deposition temperatureTd=400 °C,about 200 °C lower than that ofSrRuO3.The BST (100 nm) deposited on the BRO showed a (110) preferred orientation and crystallization formation at temperatures as low as 200 °C. An interfacial layer and the local epitaxial growth of BST on BRO layers within columnar grains were confirmed by high-resolution transmission-electron microscopy studies. UniformI–Vcharacteristics(I<1×10−7 A/cm2)for bias voltages in the range 0.0–3.0 V of all the BST films deposited withinTd=300–500 °Cwere observed. The dielectric constants of the BST films (e.g.,&egr;r=300atTd=400 °C)are considerably higher than those generally achievable for the sameTdby using Pt bottom electrodes. The dependence of the annealing atmosphere(N2andO2)of the dielectric constants was studied and attributed to a diffused BST/BRO interfacial layer which is semiconductive in a reduced state and insulating in an oxidized state. ©1998 American Institute of Physics.