The influence of polarity on the SiC crystal growth has been demonstrated using a dual‐seed technique to grow on both the C‐ and Si‐face seed simultaneously. For the investigated range of growth conditions, 4H‐SiC crystals were grown on the C‐face of 6H‐SiC seed crystals with on‐axis orientation, when the growth rate exceeded 1.2 g/h. We were never able to grow 4H‐SiC on the Si‐ face of 6H‐ or 4H‐SiC seed crystals under these growth conditions. The incorporation of nitrogen is shown to be 2–3 times higher in crystals grown on the C‐face than on the Si‐face, and is independent of both polytype and 8° off‐axis orientation. The addition of more than 15% silicon powder to the SiC sublimation source resulted in polycrystalline growth. ©1996 American Institute of Physics.