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Si—O bond structure in slow‐ion deposited SiO2films

 

作者: D. H. Baek,   B. O. Kim,   J. I. Jeong,   C. Y. Kim,   J. W. Chung,  

 

期刊: Journal of Applied Physics  （AIP Available online 1991）
卷期: Volume 69, issue 5  

页码: 3354-3356

 

ISSN:0021-8979

 

年代: 1991

 

DOI:10.1063/1.348565

 

出版商: AIP

 

数据来源: AIP

 

摘要:

By impinging a beam of O+2ions of energy 150 eV<E<1 keV on a Si(100) surface, we produced oxide films of varying thickness at room temperature. We find that the Si—O bond features of the films are quite similar to those of a thermally prepared vitreous SiO2glass. We further observe that an intermediate range order in the form ofn‐member ring clusters withn=4 andn=6 exists in the resulting films.

 

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