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Depth distributions of1H,2H, and4He implanted into HgCdTe and CdTe measured by secondar...
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Depth distributions of1H,2H, and4He implanted into HgCdTe and CdTe measured by secondary ion mass spectrometry
作者:
R. G. Wilson,
期刊:
Applied Physics Letters
(AIP Available online 1984)
卷期:
Volume 45,
issue 1
页码: 107-109
ISSN:0003-6951
年代: 1984
DOI:10.1063/1.95004
出版商: AIP
数据来源: AIP
摘要:
The capability to measure atom densities of1H,2H, and4He in HgCdTe and CdTe above about 1018cm−3in background‐subtracted cesium beam secondary ion mass spectrometry profiles has been demonstrated using ion implantation and implanted fluences. Range parameters are determined for ion energies between 150 and 300 keV. Projected ranges for1H are slightly greater than those for2H in both HgCdTe and CdTe. Hydrogen ion ranges are about 0.75 &mgr;m/100 keV of energy in both materials, and the third moment of the depth distributions is about −2.1.
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