Ferroelectric Pb(Zr,Ti)O3(PZT) thin films were prepared by pulsed excimer laser deposition on Silicon-on-Insulator (SOI) substrates with and without an electrode. Their properties can be improved by rapid thermal annealing, based on the structural and interfacial characteristics analysis by X-ray diffraction, Rutherford backscattering spectroscopy and automatic spreading resistance measurements. The thin films were revealed of to be polycrystalline perovskite structure with mainly ⟨100⟩ and ⟨110⟩ orientations; the crystallite size and the structure are dependent on the annealing time. The PZT thin films did not interact with the top silicon layers of SOI, and the composition was on the tetragonal side of the morphotropic phase boundary in the PbTiO3-PbZrO3phase diagram.