Saturation of far‐infrared photoconductivity inn‐GaAs
作者:
Fielding Brown,
Lee Link,
Stephen Platt,
期刊:
Journal of Applied Physics
(AIP Available online 1982)
卷期:
Volume 53,
issue 6
页码: 4538-4540
ISSN:0021-8979
年代: 1982
DOI:10.1063/1.331199
出版商: AIP
数据来源: AIP
摘要:
The photoconductivity of epitaxialn‐GaAs (n= 2.6×1014cm−3) has been measured in response to high intensity (P∼2.4 kW/cm2) radiation at &lgr; = 95 &mgr;m. The saturation curve of photoconductivity versus excitation power yields a recombination time of 10−8s, which is much shorter than the value predicted, 10−6s, by the theory of the electron‐phonon interaction. Recombination appears to occur from localized states as well as by capture of free conduction band electrons.
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