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Reactive ion etching of GaAs and InP using SiCl4

 

作者: M. B. Stern,   P. F. Liao,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1983）
卷期: Volume 1, issue 4  

页码: 1053-1055

 

ISSN:0734-211X

 

年代: 1983

 

DOI:10.1116/1.582674

 

出版商: American Vacuum Society

 

关键词: gallium arsenides;indium phosphides;etching;ion beams;masking;silicon chlorides;silicon nitrides;nickel alloys;chromium alloys;high−resolution methods;power;line shape;medium vacuum

 

数据来源: AIP

 

摘要:

High resolution reactive ion etching of GaAs and InP is achieved using SiCl4as the etching gas. Etching rates and profiles are examined at pressures between 1 and 10 mTorr and power densities from 0.2 to 0.9 W/cm2. Under the proper conditions, it is possible to obtain extremely vertical etch profiles and etch ratios of GaAs relative to masking materials such as Si3N4and NiCr which exceed 10 to 1.

 

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