Copper‐related deep level defects in III–V semiconductors
作者:
N. Kullendorff,
L. Jansson,
L‐A˚. Ledebo,
期刊:
Journal of Applied Physics
(AIP Available online 1983)
卷期:
Volume 54,
issue 6
页码: 3203-3212
ISSN:0021-8979
年代: 1983
DOI:10.1063/1.332481
出版商: AIP
数据来源: AIP
摘要:
Copper‐diffused InP and GaAs have been studied using junction space‐charge spectroscopy. Two dominant copper‐related deep level defects are observed in both materials. Photoionization cross sections of holes and electrons, thermal hole emission rates, and one electron capture cross section have been measured. In InP one of the ionization spectra exhibits a pronounced phonon‐related structure. The results, together with previous work on GaAs:Cu, GaP:Cu, GaAs:Cu, and AlGaAs:Cu, indicate a common geometrical structure for each of the two copper‐related defects in all the materials.
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