On the intrinsic bistability in resonant tunneling structures: Observation of area dependence of hysteresis
作者:
J. G. Chen,
C. H. Yang,
R. A. Wilson,
期刊:
Journal of Applied Physics
(AIP Available online 1991)
卷期:
Volume 69,
issue 7
页码: 4132-4134
ISSN:0021-8979
年代: 1991
DOI:10.1063/1.348428
出版商: AIP
数据来源: AIP
摘要:
We investigated the current‐voltage characteristics of double‐barrier resonant tunneling diodes with areas ranged from ∼400 &mgr;m2to ∼10 &mgr;m2at a temperature of 300 and 4.2 K. For diodes of large areas, the characteristic negative differential resistance is always accompanied by a hysteresis and oscillation at several tens of MHz. However, for smaller diodes, the hysteresis and oscillation disappear, and the tunneling current shows a smooth transition between peak and valley. Our observation shows that the hysteresis can result from a load line effect. Were the hysteresis an intrinsic behavior, it should persist as the device area is reduced. We therefore conclude that the intrinsic bistability is yet to be experimentally confirmed.
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