A new technique, oxide current relaxation spectroscopy, has been presented for observing various traps and/or charges in the thin oxide. This technique is based on electron‐fluence‐dependent current characteristics in tunneling metal‐oxide‐semiconductor structures under high field stresses. It is capable of showing the spectrum of traps and/or charges in the thin‐gate SiO2as positive and negative peaks on an axis as a function of electron fluence. The height and position of each spectrum peak are related to the density, centroid, and capture cross section of the corresponding kind of the traps and/or charges. The parameters of various traps and/or charges in the thin SiO2have been measured. The experimental results are consistent with theoretical calculations.