Stress and stress relaxation in integrated circuit metals and dielectrics
作者:
Bruce L. Draper,
Thomas A. Hill,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1991)
卷期:
Volume 9,
issue 4
页码: 1956-1962
ISSN:1071-1023
年代: 1991
DOI:10.1116/1.585387
出版商: American Vacuum Society
关键词: ALUMINIUM ALLOYS;SILICON ALLOYS;COPPER ALLOYS;INTEGRATED CIRCUITS;STRESSES;TEMPERATURE DEPENDENCE;ACTIVATION ENERGY;PLASMA;CHEMICAL VAPOR DEPOSITION
数据来源: AIP
摘要:
In order to provide data needed in the investigation and modeling of stress voiding in integrated circuit metallizations, stress and stress relaxation in Al/Si/Cu alloys and common dielectrics were studied as a function of storage temperature and deposition conditions. It was found that the room‐temperature tensile stress in Al/Si/Cu increases with increasing substrate bias and deposition temperature, and that the isothermal relaxation rate upon cooling from 400 °C is sharply dependent on temperature. The activation energy for the relaxation process was found to be 0.39 eV above 130 °C and about 0.08 eV at lower temperatures. For insulating layers deposited with plasma‐enhanced chemical‐vapor deposition techniques, strong correlations were found among stress, density, hydrogen content, deposition temperature, and film composition (oxides, nitrides, and several intermediate oxynitrides), with the highest levels of compressive stress (near 1 GPa) being measured in nitride films deposited at 300 °C. These films, as well as phosphorus‐doped glasses used as capping/protection layers, were found to undergo structural changes upon post‐deposition thermal cycling which affected stress levels.
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