Optical characterization of lateral epitaxial overgrown GaN layers
作者:
Jaime A. Freitas,
Ok-Hyun Nam,
Robert F. Davis,
Gennady V. Saparin,
Sergey K. Obyden,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 72,
issue 23
页码: 2990-2992
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.121517
出版商: AIP
数据来源: AIP
摘要:
The optical properties of homoepitaxial GaN layers deposited by organometallic vapor phase epitaxy on stripe-patterned GaN films on 6H-SiC substrates have been investigated. Analysis of the spatially-resolved Raman scattering spectra indicate an improvement in material quality of the overgrown region. Room-temperature color cathodoluminescence imaging and low-temperature photoluminescence measurements indicate that a donor and an acceptor, different from those detected in the underlying GaN/AlN/SiC substrate, have been incorporated in the epitaxial layer. Detailed photoluminescence studies of the near-band-edge emission strongly suggest that Si is the additional donor detected in the homoepitaxial GaN layer. Its occurrence, along with that of an acceptor-related defect which is primarily found in the laterally overgrown region, is discussed. ©1998 American Institute of Physics.
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