Electron irradiation of silicon photovoltaic cell causes a pronounced decrease on its output characteristics. On the other hand, short circuit current temperature coefficient is greatly increased with both; radiation fluence and energy, while open circuit voltage temperature coefficient remains fairly unaffected. Shelf annealing of the electron irradiated cell recovers about 50% of its initial output characteristics. Oven annealing was shown to have a significant effect, where heat treatment at 100°C for one hour cause the sample to regain 95% of its initial characteristics.