首页   按字顺浏览 期刊浏览 卷期浏览 Study of the GaAs–Au and Si–SiO2interface formation by the Kelvin method
Study of the GaAs–Au and Si–SiO2interface formation by the Kelvin method

 

作者: L. Lassabatère,   J. M. Palau,   E. Vieujot‐Testemale,   A. Ismail,   C. Raisin,   J. Bonnet,   L. Soonckindt,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1983）
卷期: Volume 1, issue 3  

页码: 540-545

 

ISSN:0734-211X

 

年代: 1983

 

DOI:10.1116/1.582595

 

出版商: American Vacuum Society

 

关键词: interface phenomena;crystal defects;surface structure;affinity;oxidation;work functions;barrier height;surface coating;coatings

 

数据来源: AIP

 

摘要:

In this paper we describe typical and simple results concerning the deposition of metal on GaAs surfaces and the first steps of Si oxidation. In the case of GaAs/metal, typical results illustrating the barrier formation, the electron affinity modification, the contribution of initial surface defects, and metal induced defects are presented and discussed, using the unified model of Spicer, Lindauetal. In the case of Si/SiO2, we focus on illustrating the method of the growth of the oxide and the resulting work function modifications.

 

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