Influence of indium doping on AlGaAs layers grown by molecular beam epitaxy
作者:
K. H. Chang,
C. P. Lee,
J. S. Wu,
D. G. Liu,
D. C. Liou,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 57,
issue 16
页码: 1640-1642
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.104073
出版商: AIP
数据来源: AIP
摘要:
Influence of indium doping on the qualities of AlGaAs layers grown by molecular beam epitaxy has been studied. It was found that a proper amount of In doping can increase the photoluminescence intensity drastically by a factor greater than 10 indicating an improvement in the optical quality of AlGaAs epilayers. The improvement in the material quality is attributed to a higher surface migration rate of In atoms than those of Ga and Al atoms leading to a reduction of group III vacancies. However, too great a concentration of In atoms leads to effects that may degrade the film quality.
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