Mobility spectrum approach in the analysis of the electrical conduction of a GaAs layer grown by molecular beam epitaxy
作者:
K. Regin´ski,
J. Marczewski,
Z. Dziuba,
E. Grodzicka,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 82,
issue 12
页码: 6102-6106
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.366481
出版商: AIP
数据来源: AIP
摘要:
A new algorithm of the analysis of the electrical conduction in the layers forming a semiconductor structure has been described. In the algorithm, in contrast to earlier approaches, the mobility spectrum technique has been applied to the sheet conductivity tensor. The standard carriers parameters have been estimated from the tensor components in the high and low magnetic field limits. The proposed method has been illustrated by the analysis of results of the electrical conduction measurements versus magnetic field performed up to 1.6 T at 77 K in a molecular beam epitaxial (MBE) grown GaAs:Si structure. The sample was an MBE GaAs:Si layer grown on a buffer epilayer. As a result of the analysis, the mobility spectra and the standard parameters describing carriers in different layers have been found. ©1997 American Institute of Physics.
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