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Gas release studies of silicon implanted with low energy He+and Kr+ions

 

作者: A.L. M. Davies,   G. Carter,  

 

期刊: Radiation Effects  （Taylor Available online 1971）
卷期: Volume 10, issue 4  

页码: 227-233

 

ISSN:0033-7579

 

年代: 1971

 

DOI:10.1080/00337577108231090

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

A silicon (111) surface was bombarded in U.H.V. with low energy (≤1 keV) He+and Kr+ions. The ions retained within the solid were subsequently desorbed into a closed volume, by raising the target temperature linearly, with respect to time, at a rate of 30°KS−1. The differentiated signal in a mass spectrometer provided desorption spectra.

 

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