W was found to produce low specific contact resistance (&rgr;c∼8.0×10−5&OHgr; cm2) ohmic contacts ton+‐GaN (n=1.5×1019cm−3) with limited reaction between the metal and semiconductor up to 1000 °C. The formation of the &bgr;–W2N and W–N interfacial phases were deemed responsible for the electrical integrity observed at these annealing temperatures. No Ga out‐diffusion was observed on the surface of thin (500 A˚) W contacts even after 1000 °C, 1 min anneals. Thus, W appears to be a stable contact ton+‐GaN for high temperature applications. ©1996 American Institute of Physics.