Fe (111) single crystal films have been grown on GaAs (111) by the sputter-beam method. Reflection high energy electron diffraction and x-ray diffraction measurements have revealed excellent aligned epitaxial growth of the Fe (111) film on GaAs. No evidence of preferential diffusion of As atoms into the deposited Fe layers has been found in the depth profile of Auger electron spectra. Magnetic measurements clearly show that the Fe (111) film has nearly ideal threefold symmetric anisotropy and exhibits isotropic initial permeability in the film plane, as predicted by theory.©1997 American Institute of Physics.